smd type ic www.kexin.com.cn 1 smd type transistors silicon pnp epitaxial 2SA1947 features high f t :f t =100mhz typ excellent linearity of dc forward current gain high collector current icm=-1.5a small package for mounting absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -30 v emitter-base voltage v ebo -4 v collector-emitter voltage v ceo -25 v peak collector current i cm -1.5 a collector current i c -1 a collector dissipation (ta=25 ) p c 500 mw jumction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit colllector-base breakdown voltage v (br)cbo i c =-10a,i e =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-10a,i c =0 -4 v collector-emitter breakdown voltage v (br)ceo i c =-100a,r be = -25 v collector cutoff current i cbo v cb =-25v,i e =0 -1 a emitter cutoff current i ebo v eb =-2v,i c =0 -1 a dc current gain h fe v ce =-1v,i c =-500ma 55 300 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-25ma -0.5 v gain bandwidth product f t v ce =-6v,i e =-10ma 100 mhz h fe classification marking abc abd abe hfe 55 110 90 180 150 300
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